IXTR20P50P Datasheet. Specs and Replacement

Type Designator: IXTR20P50P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 406 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm

Package: ISOPLUAS247

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IXTR20P50P substitution

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IXTR20P50P datasheet

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Detailed specifications: IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P, IXTR200N10P, MMIS60R580P, IXTR30N25, IXTR32P60P, IXTR36P15P, IXTR40P50P, IXTR48P20P, IXTR62N15P, IXTR90P10P, IXTR90P20P

Keywords - IXTR20P50P MOSFET specs

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