All MOSFET. IXTR36P15P Datasheet

 

IXTR36P15P Datasheet and Replacement


   Type Designator: IXTR36P15P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ISOPLUS247
 

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IXTR36P15P Datasheet (PDF)

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IXTR36P15P

Advance Technical InformationStandard Power MOSFETsIXTR 30N25VDSS = 250 VISOPLUS247TM ID (cont) = 25 ARDS(on) = 75 m(Electrically Isolated Backside)N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continu

Datasheet: IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , IXTR32P60P , AO4468 , IXTR40P50P , IXTR48P20P , IXTR62N15P , IXTR90P10P , IXTR90P20P , IXTT100N25P , IXTT10N100D , IXTT10N100D2 .

History: HGP045N15S

Keywords - IXTR36P15P MOSFET datasheet

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