IXTR36P15P Datasheet. Specs and Replacement
Type Designator: IXTR36P15P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: ISOPLUS247
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IXTR36P15P substitution
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IXTR36P15P datasheet
ixtr30n25.pdf
Advance Technical Information Standard Power MOSFETs IXTR 30N25 VDSS = 250 V ISOPLUS247TM ID (cont) = 25 A RDS(on) = 75 m (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continu... See More ⇒
Detailed specifications: IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P, IXTR200N10P, IXTR20P50P, IXTR30N25, IXTR32P60P, 60N06, IXTR40P50P, IXTR48P20P, IXTR62N15P, IXTR90P10P, IXTR90P20P, IXTT100N25P, IXTT10N100D, IXTT10N100D2
Keywords - IXTR36P15P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFAC30 | IRF9Z14PBF
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