All MOSFET. IXTR36P15P Datasheet

 

IXTR36P15P Datasheet and Replacement


   Type Designator: IXTR36P15P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 150 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ISOPLUS247
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IXTR36P15P Datasheet (PDF)

 9.1. Size:77K  ixys
 ixtr30n25.pdf pdf_icon

IXTR36P15P

Advance Technical InformationStandard Power MOSFETsIXTR 30N25VDSS = 250 VISOPLUS247TM ID (cont) = 25 ARDS(on) = 75 m(Electrically Isolated Backside)N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continu

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History: FDMS9620S | AM2314NE | WMM11N80M3 | IRFI7536G

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