IXTT360N055T2 Datasheet. Specs and Replacement

Type Designator: IXTT360N055T2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 935 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO268

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IXTT360N055T2 datasheet

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IXTT360N055T2

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IXTT360N055T2

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

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IXTT360N055T2

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

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IXTT360N055T2

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu... See More ⇒

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Detailed specifications: IXTT26N50P, IXTT26N60P, IXTT28N50Q, IXTT30N50L, IXTT30N50L2, IXTT30N50P, IXTT30N60L2, IXTT30N60P, STP75NF75, IXTT36N50P, IXTT40N50L2, IXTT440N055T2, IXTT48P20P, IXTT500N04T2, IXTT50N30, IXTT50P085, IXTT50P10

Keywords - IXTT360N055T2 MOSFET specs

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