IXTT360N055T2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTT360N055T2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 935 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 360 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 78 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: TO268
Аналог (замена) для IXTT360N055T2
IXTT360N055T2 Datasheet (PDF)
ixth360n055t2 ixtt360n055t2.pdf
Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH360N055T2ID25 = 360AMOSFET IXTT360N055T2 RDS(on) 2.4m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C55 V (TAB)SVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf
IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf
IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS
ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf
IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu
ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf
VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf
IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf
IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixth3n200p3hv ixtt3n200p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918