All MOSFET. IXTT440N055T2 Datasheet

 

IXTT440N055T2 Datasheet and Replacement


   Type Designator: IXTT440N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 440 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO268
 

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IXTT440N055T2 Datasheet (PDF)

 9.1. Size:190K  ixys
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IXTT440N055T2

High Voltage VDSS = 1500VIXTA4N150HVID25 = 4APower MOSFETsIXTT4N150HV RDS(on) 6 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263HVSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1500 VSVDGR TJ = 25C to 150C, RGS = 1M 1500 VD (Tab)VGSS Continuous 30 VVGSM Trans

Datasheet: IXTT30N50L , IXTT30N50L2 , IXTT30N50P , IXTT30N60L2 , IXTT30N60P , IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IRF4905 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

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