All MOSFET. IXTT500N04T2 Datasheet

 

IXTT500N04T2 Datasheet and Replacement


   Type Designator: IXTT500N04T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 500 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO268
 

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IXTT500N04T2 Datasheet (PDF)

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IXTT500N04T2

Advance Technical InformationTrenchT2TM VDSS = 40VIXTH500N04T2ID25 = 500APower MOSFETIXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VVDGR TJ = 25C to 175C, RGS = 1M 40 VTO-268 (IXTT)VGSM T

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 ixtq52n30p ixtt52n30p.pdf pdf_icon

IXTT500N04T2

IXTQ52N30P VDSS = 300 VPolarHTTMIXTT52N30P ID25 = 52 APower MOSFET RDS(on) 66 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C52 AD(TAB)

Datasheet: IXTT30N50P , IXTT30N60L2 , IXTT30N60P , IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , AO3400 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , IXTT64N25P , IXTT68P20T .

History: DMNH10H028SK3 | LSF65R380HT | DMP2003UPS | UTT6NP10G-S08-R | SIA537EDJ | FQD24N08TM | QM2N7002E3K1

Keywords - IXTT500N04T2 MOSFET datasheet

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