All MOSFET. IXTT50P10 Datasheet

 

IXTT50P10 Datasheet and Replacement


   Type Designator: IXTT50P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 180 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO268
 

 IXTT50P10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTT50P10 Datasheet (PDF)

 8.1. Size:187K  ixys
 ixth500n04t2 ixtt500n04t2.pdf pdf_icon

IXTT50P10

Advance Technical InformationTrenchT2TM VDSS = 40VIXTH500N04T2ID25 = 500APower MOSFETIXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VVDGR TJ = 25C to 175C, RGS = 1M 40 VTO-268 (IXTT)VGSM T

 9.1. Size:168K  ixys
 ixtq52n30p ixtt52n30p.pdf pdf_icon

IXTT50P10

IXTQ52N30P VDSS = 300 VPolarHTTMIXTT52N30P ID25 = 52 APower MOSFET RDS(on) 66 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C52 AD(TAB)

Datasheet: IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , 2SK3568 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , IXTT64N25P , IXTT68P20T , IXTT69N30P , IXTT6N120 , IXTT72N10 .

History: APT3580BN | RSR030N06

Keywords - IXTT50P10 MOSFET datasheet

 IXTT50P10 cross reference
 IXTT50P10 equivalent finder
 IXTT50P10 lookup
 IXTT50P10 substitution
 IXTT50P10 replacement

 

 
Back to Top

 


 
.