IXTT52N30P Datasheet. Specs and Replacement

Type Designator: IXTT52N30P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: TO268

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IXTT52N30P substitution

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IXTT52N30P datasheet

 ..1. Size:168K  ixys
 ixtq52n30p ixtt52n30p.pdf pdf_icon

IXTT52N30P

IXTQ52N30P VDSS = 300 V PolarHTTM IXTT52N30P ID25 = 52 A Power MOSFET RDS(on) 66 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C52 A D (TAB) ... See More ⇒

 9.1. Size:187K  ixys
 ixth500n04t2 ixtt500n04t2.pdf pdf_icon

IXTT52N30P

Advance Technical Information TrenchT2TM VDSS = 40V IXTH500N04T2 ID25 = 500A Power MOSFET IXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V VDGR TJ = 25 C to 175 C, RGS = 1M 40 V TO-268 (IXTT) VGSM T... See More ⇒

Detailed specifications: IXTT36N50P, IXTT40N50L2, IXTT440N055T2, IXTT48P20P, IXTT500N04T2, IXTT50N30, IXTT50P085, IXTT50P10, SPP20N60C3, IXTT60N10, IXTT60N20L2, IXTT64N25P, IXTT68P20T, IXTT69N30P, IXTT6N120, IXTT72N10, IXTT72N20

Keywords - IXTT52N30P MOSFET specs

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