All MOSFET. IXTU1R4N60P Datasheet

 

IXTU1R4N60P Datasheet and Replacement


   Type Designator: IXTU1R4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO251
 

 IXTU1R4N60P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTU1R4N60P Datasheet (PDF)

 9.1. Size:161K  ixys
 ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

IXTU1R4N60P

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

Datasheet: IXTT90P10P , IXTT96N15P , IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , IXTU12N06T , IXTU1N80P , SI2302 , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T , IXTV110N25TS , IXTV18N60P .

Keywords - IXTU1R4N60P MOSFET datasheet

 IXTU1R4N60P cross reference
 IXTU1R4N60P equivalent finder
 IXTU1R4N60P lookup
 IXTU1R4N60P substitution
 IXTU1R4N60P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.