IXTU5N50P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTU5N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12.6 nC
Rise Time (tr): 400 nS
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO251
IXTU5N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTU5N50P Datasheet (PDF)
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