IXTV02N250S Datasheet. Specs and Replacement

Type Designator: IXTV02N250S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 450 Ohm

Package: PLUS220SMD

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IXTV02N250S datasheet

 ..1. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTV02N250S

High Voltage IXTH02N250 VDSS = 2500V Power MOSFETs ID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V PLUS220SMD (IXTV_S) VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient... See More ⇒

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 ixth03n400 ixtv03n400s.pdf pdf_icon

IXTV02N250S

Advance Technical Information High Voltage VDSS = 4000V IXTH03N400 ID25 = 300mA Power MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4000 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V VGSS Continuous 20 V VGSM Transie... See More ⇒

Detailed specifications: IXTU02N50D, IXTU05N100, IXTU12N06T, IXTU1N80P, IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P, IRF520, IXTV03N400S, IXTV102N20T, IXTV110N25TS, IXTV18N60P, IXTV18N60PS, IXTV200N10T, IXTV200N10TS, IXTV22N50P

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