IXTV02N250S Datasheet and Replacement
Type Designator: IXTV02N250S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.4 nC
tr ⓘ - Rise Time: 1500 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 450 Ohm
Package: PLUS220SMD
IXTV02N250S substitution
IXTV02N250S Datasheet (PDF)
ixth02n250 ixtv02n250s.pdf
High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient
ixth03n400 ixtv03n400s.pdf
Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie
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