IXTV102N20T Datasheet. Specs and Replacement
Type Designator: IXTV102N20T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 750 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 102 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: PLUS220
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IXTV102N20T substitution
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IXTV102N20T datasheet
Detailed specifications: IXTU12N06T, IXTU1N80P, IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P, IXTV02N250S, IXTV03N400S, STF13NM60N, IXTV110N25TS, IXTV18N60P, IXTV18N60PS, IXTV200N10T, IXTV200N10TS, IXTV22N50P, IXTV22N50PS, IXTV22N60P
Keywords - IXTV102N20T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: UPA2709AGR | UPA2743T1A | IXTR90P20P | IXTT60N10 | AP40P04DF | IXTR62N15P | UPA2701GR
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