All MOSFET. IXTV102N20T Datasheet

 

IXTV102N20T Datasheet and Replacement


   Type Designator: IXTV102N20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 750 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 102 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 114 nC
   trⓘ - Rise Time: 130 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: PLUS220
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IXTV102N20T Datasheet (PDF)

 9.1. Size:171K  ixys
 ixtq18n60p ixtv18n60p.pdf pdf_icon

IXTV102N20T

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

Datasheet: IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S , IXTV03N400S , AON7403 , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T , IXTV200N10TS , IXTV22N50P , IXTV22N50PS , IXTV22N60P .

History: FP11W60C3

Keywords - IXTV102N20T MOSFET datasheet

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