IXTV110N25TS Datasheet. Specs and Replacement
Type Designator: IXTV110N25TS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 694 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: PLUS220SMD
📄📄 Copy
IXTV110N25TS substitution
- MOSFET ⓘ Cross-Reference Search
IXTV110N25TS datasheet
Detailed specifications: IXTU1N80P, IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P, IXTV02N250S, IXTV03N400S, IXTV102N20T, IRFZ24N, IXTV18N60P, IXTV18N60PS, IXTV200N10T, IXTV200N10TS, IXTV22N50P, IXTV22N50PS, IXTV22N60P, IXTV22N60PS
Keywords - IXTV110N25TS MOSFET specs
IXTV110N25TS cross reference
IXTV110N25TS equivalent finder
IXTV110N25TS pdf lookup
IXTV110N25TS substitution
IXTV110N25TS replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
