All MOSFET. IXTV110N25TS Datasheet

 

IXTV110N25TS Datasheet and Replacement


   Type Designator: IXTV110N25TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 157 nC
   tr ⓘ - Rise Time: 170 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS220SMD
 

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IXTV110N25TS Datasheet (PDF)

 9.1. Size:171K  ixys
 ixtq18n60p ixtv18n60p.pdf pdf_icon

IXTV110N25TS

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

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History: FCA20N60S

Keywords - IXTV110N25TS MOSFET datasheet

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