IXTV110N25TS Datasheet and Replacement

   Type Designator: IXTV110N25TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 157 nC
   trⓘ - Rise Time: 170 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS220SMD
      - MOSFET Cross-Reference Search