All MOSFET. IXTV18N60PS Datasheet

 

IXTV18N60PS MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTV18N60PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 500 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: PLUS220SMD

 IXTV18N60PS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTV18N60PS Datasheet (PDF)

 4.1. Size:171K  ixys
 ixtq18n60p ixtv18n60p.pdf

IXTV18N60PS IXTV18N60PS

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

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