IXTX24N100 MOSFET Datasheet: N-Ch, 1000V, 24A. Full specification with pinout and replacement list

IXTX24N100 Specs and Replacement

   Type Designator: IXTX24N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 850 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: PLUS247

IXTX24N100 substitution

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IXTX24N100 datasheet

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High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on) ... See More ⇒

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Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

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Detailed specifications: IXTV86N25T , IXTV96N25T , IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IRFP460 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L .