IXTX32P60P Specs and Replacement
Type Designator: IXTX32P60P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 480 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: PLUS247
IXTX32P60P substitution
IXTX32P60P datasheet
No PDF!
Detailed specifications: IXTV96N25T , IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IXTX24N100 , IRFZ44 , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 .
History: AM10P10-530I | IRFM064
Keywords - IXTX32P60P MOSFET specs
IXTX32P60P cross reference
IXTX32P60P equivalent finder
IXTX32P60P pdf lookup
IXTX32P60P substitution
IXTX32P60P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AM10P10-530I | IRFM064
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