IXTX40P50P PDF and Equivalents Search

 

IXTX40P50P Specs and Replacement


   Type Designator: IXTX40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 477 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: PLUS247
 

 IXTX40P50P substitution

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IXTX40P50P datasheet

 9.1. Size:117K  ixys
 ixtk46n50l ixtx46n50l.pdf pdf_icon

IXTX40P50P

Preliminary Technical Information IXTK46N50L VDSS = 500 V Linear Power MOSFET IXTX46N50L ID25 = 46 A With Extended FBSOA RDS(on) 0.16 N-Channel Enhancement Mode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G D VGS Continuous 30 V S (TAB) VGSM Transient ... See More ⇒

Detailed specifications: IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IRF640 , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P .

History: FDD1600N10ALZD

Keywords - IXTX40P50P MOSFET specs

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