All MOSFET. IXTX40P50P Datasheet

 

IXTX40P50P Datasheet and Replacement


   Type Designator: IXTX40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 477 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: PLUS247
 

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IXTX40P50P Datasheet (PDF)

 9.1. Size:117K  ixys
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IXTX40P50P

Preliminary Technical InformationIXTK46N50L VDSS = 500 VLinear Power MOSFETIXTX46N50L ID25 = 46 AWith Extended FBSOA RDS(on) 0.16 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGDVGS Continuous 30 VS(TAB)VGSM Transient

Datasheet: IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IRFP460 , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P .

History: SI3879DV | SIHFSL9N60A

Keywords - IXTX40P50P MOSFET datasheet

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