IXTX600N04T2 PDF and Equivalents Search

 

IXTX600N04T2 Specs and Replacement


   Type Designator: IXTX600N04T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 600 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PLUS247
 

 IXTX600N04T2 substitution

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IXTX600N04T2 datasheet

 8.1. Size:221K  inchange semiconductor
 ixtx60n50l2.pdf pdf_icon

IXTX600N04T2

isc N-Channel MOSFET Transistor IXTX60N50L2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G... See More ⇒

Detailed specifications: IXTX20N140 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IRF640N , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IXTY02N120P .

Keywords - IXTX600N04T2 MOSFET specs

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