All MOSFET. IXTY26P10T Datasheet

 

IXTY26P10T Datasheet and Replacement


   Type Designator: IXTY26P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 IXTY26P10T substitution

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IXTY26P10T Datasheet (PDF)

 9.1. Size:90K  ixys
 ixtp2r4n50p ixty2r4n50p.pdf pdf_icon

IXTY26P10T

IXTP 2R4N50P VDSS = 500 VPolarHVTMIXTY 2R4N50P ID25 = 2.4 APower MOSFET RDS(on) 3.75 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGSM Transient 40 V(TAB)GVGSM Continuous 30 V DSID25 TC = 25C 2.4 A

 9.2. Size:183K  ixys
 ixtp2n65x2 ixty2n65x2.pdf pdf_icon

IXTY26P10T

Preliminary Technical InformationX2-Class VDSS = 650VIXTY2N65X2Power MOSFET ID25 = 2AIXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient

Datasheet: IXTY1N100P , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , AON7410 , IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T .

History: QM6214S | AP60T06GP-HF | PMPB10EN | NCE50NF220K | AM40P03-20I | AM2340N | MPSW65M046CFD

Keywords - IXTY26P10T MOSFET datasheet

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