IXTY2N100P MOSFET Datasheet: N-Ch, 1000V, 2A. Full specification with pinout and replacement list

IXTY2N100P Specs and Replacement

   Type Designator: IXTY2N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 800 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO252

IXTY2N100P substitution

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IXTY2N100P datasheet

8.1. Size:183K ixys
ixtp2n65x2 ixty2n65x2.pdf pdf_icon

Preliminary Technical Information X2-Class VDSS = 650V IXTY2N65X2 Power MOSFET ID25 = 2A IXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient... See More ⇒

9.1. Size:90K ixys
ixtp2r4n50p ixty2r4n50p.pdf pdf_icon

IXTP 2R4N50P VDSS = 500 V PolarHVTM IXTY 2R4N50P ID25 = 2.4 A Power MOSFET RDS(on) 3.75 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSM Transient 40 V (TAB) G VGSM Continuous 30 V D S ID25 TC = 25 C 2.4 A ... See More ⇒

Detailed specifications: IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T , SKD502T , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T .