All MOSFET. IXTY2R4N50P Datasheet

 

IXTY2R4N50P Datasheet and Replacement


   Type Designator: IXTY2R4N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.75 Ohm
   Package: TO252AA
 

 IXTY2R4N50P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTY2R4N50P Datasheet (PDF)

 ..1. Size:90K  ixys
 ixtp2r4n50p ixty2r4n50p.pdf pdf_icon

IXTY2R4N50P

IXTP 2R4N50P VDSS = 500 VPolarHVTMIXTY 2R4N50P ID25 = 2.4 APower MOSFET RDS(on) 3.75 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGSM Transient 40 V(TAB)GVGSM Continuous 30 V DSID25 TC = 25C 2.4 A

 9.1. Size:183K  ixys
 ixtp2n65x2 ixty2n65x2.pdf pdf_icon

IXTY2R4N50P

Preliminary Technical InformationX2-Class VDSS = 650VIXTY2N65X2Power MOSFET ID25 = 2AIXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient

Datasheet: IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T , IXTY2N100P , IXTY2N60P , IXTY2N80P , 5N60 , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T .

History: SFB072N150C2 | RJK0853DPB

Keywords - IXTY2R4N50P MOSFET datasheet

 IXTY2R4N50P cross reference
 IXTY2R4N50P equivalent finder
 IXTY2R4N50P lookup
 IXTY2R4N50P substitution
 IXTY2R4N50P replacement

 

 
Back to Top

 


 
.