IXTY3N60P PDF and Equivalents Search

 

IXTY3N60P Specs and Replacement

Type Designator: IXTY3N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO252AA

IXTY3N60P substitution

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IXTY3N60P datasheet

 ..1. Size:228K  ixys
 ixta3n60p ixtp3n60p ixty3n60p.pdf pdf_icon

IXTY3N60P

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P RDS(on) 2.9 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 T... See More ⇒

 8.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTY3N60P

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM ... See More ⇒

Detailed specifications: IXTY1R6N50P , IXTY26P10T , IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IRF1010E , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 .

Keywords - IXTY3N60P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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