All MOSFET. IXTY55N075T Datasheet

 

IXTY55N075T Datasheet and Replacement


   Type Designator: IXTY55N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO252AA
 

 IXTY55N075T substitution

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IXTY55N075T Datasheet (PDF)

 ..1. Size:169K  ixys
 ixtp55n075t ixty55n075t.pdf pdf_icon

IXTY55N075T

Preliminary Technical InformationIXTP55N075T VDSS = 75 VTrenchMVTMIXTY55N075T ID25 = 55 APower MOSFET RDS(on) 19.5 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 V

 9.1. Size:171K  ixys
 ixtp50n085t ixty50n085t.pdf pdf_icon

IXTY55N075T

Preliminary Technical InformationIXTP50N085T VDSS = 85 VTrenchMVTMIXTY50N085T ID25 = 50 APower MOSFET RDS(on) 23 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 V

Datasheet: IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IRFP450 , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC .

History: FIR11NS70AFG | H7N0312LM

Keywords - IXTY55N075T MOSFET datasheet

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