IXTZ550N055T2 PDF and Equivalents Search

 

IXTZ550N055T2 Specs and Replacement

Type Designator: IXTZ550N055T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 550 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: DE475

IXTZ550N055T2 substitution

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IXTZ550N055T2 datasheet

 ..1. Size:205K  ixys
 ixtz550n055t2.pdf pdf_icon

IXTZ550N055T2

Advance Technical Information TrenchT2TM GigaMOSTM VDSS = 55V IXTZ550N055T2 ID25 = 550A Power MOSFET RDS(on) 1.0m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated DE475 D Fast Intrinsic Diode D D Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 55 V G VDGR TJ = 25 C to 175 C, RGS = 1M 55 V S VGSS ... See More ⇒

Detailed specifications: IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IRFP450 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , FCP110N65F , MMIX1F520N075T2 .

History: IXTY55N075T

Keywords - IXTZ550N055T2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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