All MOSFET. IXTZ550N055T2 Datasheet

 

IXTZ550N055T2 Datasheet and Replacement


   Type Designator: IXTZ550N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 550 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 595 nC
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: DE475
 

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IXTZ550N055T2 Datasheet (PDF)

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IXTZ550N055T2

Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 55VIXTZ550N055T2ID25 = 550APower MOSFET RDS(on) 1.0m (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedDE475 DFast Intrinsic DiodeDDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 55 VGVDGR TJ = 25C to 175C, RGS = 1M 55 VSVGSS

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