All MOSFET. FCH110N65F Datasheet

 

FCH110N65F Datasheet and Replacement


   Type Designator: FCH110N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 98 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247
 

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FCH110N65F Datasheet (PDF)

 ..1. Size:1362K  fairchild semi
 fch110n65f.pdf pdf_icon

FCH110N65F

December 2014FCH110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg

 ..2. Size:2503K  onsemi
 fch110n65f.pdf pdf_icon

FCH110N65F

FCH110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150CSuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC)and lower g

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History: HY3008M | IRF7663

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