All MOSFET. 2N7002BKV Datasheet

 

2N7002BKV MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002BKV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 0.34 A

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: SOT666

2N7002BKV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002BKV Datasheet (PDF)

2.1. t2n7002bk.pdf Size:212K _update_mosfet

2N7002BKV
2N7002BKV

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications • High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5 V) RDS(ON) = 1.2 Ω (

2.2. 2n7002bkt.pdf Size:334K _philips

2N7002BKV
2N7002BKV

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

 3.1. 2n7002b.pdf Size:237K _auk

2N7002BKV
2N7002BKV

2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 2000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002B 7B2 ? SOT-

Datasheet: VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK , 2N7002BKM , 2N7002BKS , 2N7002BKT , 2SK105 , 2N7002BKW , 2N7002CK , 2N7002F , 2N7002P , 2N7002PS , 2N7002PT , 2N7002PV , 2N7002PW .

 
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