All MOSFET. BLD6G21LS-50 Datasheet

 

BLD6G21LS-50 Datasheet and Replacement


   Type Designator: BLD6G21LS-50
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm
   Package: SOT1130B
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BLD6G21LS-50 Datasheet (PDF)

 ..1. Size:378K  philips
 bld6g21l-50 bld6g21ls-50.pdf pdf_icon

BLD6G21LS-50

BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications

 8.1. Size:363K  philips
 bld6g22l-50 bld6g22ls-50.pdf pdf_icon

BLD6G21LS-50

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTB23C04J4 | HGN012N03AL | TK3A60DA | ECG454 | VBM1201K | RT3U33M | 4N65KL-T2Q-R

Keywords - BLD6G21LS-50 MOSFET datasheet

 BLD6G21LS-50 cross reference
 BLD6G21LS-50 equivalent finder
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 BLD6G21LS-50 replacement

 

 
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