All MOSFET. BLD6G21LS-50 Datasheet

 

BLD6G21LS-50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLD6G21LS-50
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm
   Package: SOT1130B

 BLD6G21LS-50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLD6G21LS-50 Datasheet (PDF)

 ..1. Size:378K  philips
 bld6g21l-50 bld6g21ls-50.pdf

BLD6G21LS-50 BLD6G21LS-50

BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications

 8.1. Size:363K  philips
 bld6g22l-50 bld6g22ls-50.pdf

BLD6G21LS-50 BLD6G21LS-50

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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