BLF6G15LS-500H
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF6G15LS-500H
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 500
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 45
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package: SOT539B
BLF6G15LS-500H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF6G15LS-500H
Datasheet (PDF)
6.1. Size:288K philips
blf6g15l-40brn.pdf
BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
6.2. Size:311K nxp
blf6g15l-250pbrn.pdf
BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH
6.3. Size:696K nxp
blf6g15l-500h 6g15ls-500h.pdf
BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal
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