BLF6G15LS-500H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BLF6G15LS-500H
Тип транзистора: LDMOS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT539B
Аналог (замена) для BLF6G15LS-500H
BLF6G15LS-500H Datasheet (PDF)
blf6g15l-40brn.pdf
BLF6G15L-40BRNPower LDMOS transistorRev. 2 12 November 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MHz)
blf6g15l-250pbrn.pdf
BLF6G15L-250PBRNPower LDMOS transistorRev. 2 3 November 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR (MH
blf6g15l-500h 6g15ls-500h.pdf
BLF6G15L-500H; BLF6G15LS-500HPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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