BLF6G22L-40P
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF6G22L-40P
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37
Ohm
Package: SOT1121A
BLF6G22L-40P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF6G22L-40P
Datasheet (PDF)
..1. Size:176K nxp
blf6g22l-40p 6g22ls-40p.pdf
BLF6G22L-40P; BLF6G22LS-40PPower LDMOS transistorRev. 1 22 September 2011 Product data sheet1. Product profile1.1 General descriptionLDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
3.1. Size:306K nxp
blf6g22l-40bn.pdf
BLF6G22L-40BNPower LDMOS transistorRev. 1 30 August 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH
6.1. Size:150K philips
blf6g22-180pn blf6g22ls-180pn.pdf
BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A
6.2. Size:80K nxp
blf6g22ls-130.pdf
BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR
6.3. Size:135K nxp
blf6g22ls-75.pdf
BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR
6.4. Size:276K nxp
blf6g22ls-100.pdf
BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A
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