BLF6G22L-40P PDF and Equivalents Search

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. ... See More ⇒

BLF6G22L-40BN Power LDMOS transistor Rev. 1 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH... See More ⇒

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A... See More ⇒

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A... See More ⇒