All MOSFET. BLF6G22L-40P Datasheet

 

BLF6G22L-40P Datasheet and Replacement


   Type Designator: BLF6G22L-40P
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SOT1121A
 
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BLF6G22L-40P Datasheet (PDF)

 ..1. Size:176K  nxp
blf6g22l-40p 6g22ls-40p.pdf pdf_icon

BLF6G22L-40P

BLF6G22L-40P; BLF6G22LS-40PPower LDMOS transistorRev. 1 22 September 2011 Product data sheet1. Product profile1.1 General descriptionLDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

 3.1. Size:306K  nxp
blf6g22l-40bn.pdf pdf_icon

BLF6G22L-40P

BLF6G22L-40BNPower LDMOS transistorRev. 1 30 August 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH

 6.1. Size:150K  philips
blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22L-40P

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

 6.2. Size:80K  nxp
blf6g22ls-130.pdf pdf_icon

BLF6G22L-40P

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

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