BLF6G27-10G PDF and Equivalents Search

 

BLF6G27-10G Specs and Replacement


   Type Designator: BLF6G27-10G
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.256 Ohm
   Package: SOT975C
 

 BLF6G27-10G substitution

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BLF6G27-10G datasheet

 ..1. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf pdf_icon

BLF6G27-10G

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation... See More ⇒

 4.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27-10G

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D... See More ⇒

 5.1. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27-10G

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p) ... See More ⇒

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf pdf_icon

BLF6G27-10G

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D... See More ⇒

Detailed specifications: BLF6G22LS-130 , BLF6G22LS-180PN , BLF6G22LS-180RN , BLF6G22LS-40P , BLF6G22LS-75 , BLF6G22S-45 , BLF6G27-10 , BLF6G27-100 , 2N7002 , BLF6G27-135 , BLF6G27-45 , BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P .

Keywords - BLF6G27-10G MOSFET specs

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