BLF6G27-10G. Аналоги и основные параметры
Наименование производителя: BLF6G27-10G
Тип транзистора: LDMOS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 10 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 28 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.256 Ohm
Тип корпуса: SOT975C
Аналог (замена) для BLF6G27-10G
- подборⓘ MOSFET транзистора по параметрам
BLF6G27-10G даташит
blf6g27-10 blf6g27-10g.pdf
BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation
blf6g27-100 blf6g27ls-100.pdf
BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D
blf6g27-135 blf6g27ls-135.pdf
BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)
blf6g27-75 6g27ls-75.pdf
BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D
Другие IGBT... BLF6G22LS-130, BLF6G22LS-180PN, BLF6G22LS-180RN, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, BLF6G27-100, 2N7002, BLF6G27-135, BLF6G27-45, BLF6G27-75, BLF6G27L-40P, BLF6G27L-50BN, BLF6G27LS-100, BLF6G27LS-135, BLF6G27LS-40P
History: CMPFJ176
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