BLF7G20LS-250P
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF7G20LS-250P
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 65
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package: SOT539B
BLF7G20LS-250P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF7G20LS-250P
Datasheet (PDF)
4.1. Size:422K philips
blf7g20ls-140p.pdf
BLF7G20LS-140PPower LDMOS transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp
4.2. Size:100K philips
blf7g20l-160p blf7g20ls-160p.pdf
BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
4.3. Size:210K philips
blf7g20l-90p blf7g20ls-90p.pdf
BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
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