Справочник MOSFET. BLF7G20LS-250P

 

BLF7G20LS-250P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF7G20LS-250P
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: SOT539B

 Аналог (замена) для BLF7G20LS-250P

 

 

BLF7G20LS-250P Datasheet (PDF)

 4.1. Size:422K  philips
blf7g20ls-140p.pdf

BLF7G20LS-250P
BLF7G20LS-250P

BLF7G20LS-140PPower LDMOS transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 4.2. Size:100K  philips
blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20LS-250P
BLF7G20LS-250P

BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.3. Size:210K  philips
blf7g20l-90p blf7g20ls-90p.pdf

BLF7G20LS-250P
BLF7G20LS-250P

BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

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