BLF7G27LS-100 PDF and Equivalents Search

 

BLF7G27LS-100 Specs and Replacement

Type Designator: BLF7G27LS-100

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 28 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT502B

BLF7G27LS-100 substitution

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BLF7G27LS-100 datasheet

 ..1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdf pdf_icon

BLF7G27LS-100

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒

 4.1. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdf pdf_icon

BLF7G27LS-100

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq ... See More ⇒

 4.2. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdf pdf_icon

BLF7G27LS-100

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒

 6.1. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdf pdf_icon

BLF7G27LS-100

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation ... See More ⇒

Detailed specifications: BLF7G24LS-140, BLF7G27L-100, BLF7G27L-135, BLF7G27L-140, BLF7G27L-150P, BLF7G27L-200PB, BLF7G27L-75P, BLF7G27L-90P, IRLB3034, BLF7G27LS-140, BLF7G27LS-150P, BLF7G27LS-200PB, BLF7G27LS-75P, BLF7G27LS-90P, BLF861A, BLF871, BLF871S

Keywords - BLF7G27LS-100 MOSFET specs

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