BLF7G27LS-100 Specs and Replacement
Type Designator: BLF7G27LS-100
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 28 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT502B
BLF7G27LS-100 substitution
- MOSFET ⓘ Cross-Reference Search
BLF7G27LS-100 datasheet
blf7g27l-100 blf7g27ls-100.pdf
BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒
blf7g27l-75p blf7g27ls-75p.pdf
BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq ... See More ⇒
blf7g27l-90p blf7g27ls-90p.pdf
BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ... See More ⇒
blf7g27l-150p 7g27ls-150p.pdf
BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation ... See More ⇒
Detailed specifications: BLF7G24LS-140, BLF7G27L-100, BLF7G27L-135, BLF7G27L-140, BLF7G27L-150P, BLF7G27L-200PB, BLF7G27L-75P, BLF7G27L-90P, IRLB3034, BLF7G27LS-140, BLF7G27LS-150P, BLF7G27LS-200PB, BLF7G27LS-75P, BLF7G27LS-90P, BLF861A, BLF871, BLF871S
Keywords - BLF7G27LS-100 MOSFET specs
BLF7G27LS-100 cross reference
BLF7G27LS-100 equivalent finder
BLF7G27LS-100 pdf lookup
BLF7G27LS-100 substitution
BLF7G27LS-100 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
irfb4227 | irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450
