Справочник MOSFET. BLF7G27LS-100

 

BLF7G27LS-100 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G27LS-100
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT502B
 

 Аналог (замена) для BLF7G27LS-100

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF7G27LS-100 Datasheet (PDF)

 ..1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdfpdf_icon

BLF7G27LS-100

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.1. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdfpdf_icon

BLF7G27LS-100

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 4.2. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdfpdf_icon

BLF7G27LS-100

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 6.1. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdfpdf_icon

BLF7G27LS-100

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

Другие MOSFET... BLF7G24LS-140 , BLF7G27L-100 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , 60N06 , BLF7G27LS-140 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S .

History: IXTP14N60P | STW20N95K5 | HM4N65I | HM4N65K | SVFP14N60CFJ

 

 
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