BLF879P PDF and Equivalents Search

 

BLF879P Specs and Replacement


   Type Designator: BLF879P
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 42 V
   |Id| ⓘ - Maximum Drain Current: 38 A

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT539A
 

 BLF879P substitution

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BLF879P datasheet

 ..1. Size:516K  nxp
blf879p blf879ps.pdf pdf_icon

BLF879P

BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance a... See More ⇒

 9.1. Size:134K  philips
blf871.pdf pdf_icon

BLF879P

BLF871 UHF power LDMOS transistor Rev. 01 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transm... See More ⇒

 9.2. Size:587K  philips
blf871 blf871s.pdf pdf_icon

BLF879P

BLF871; BLF871S UHF power LDMOS transistor Rev. 04 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita... See More ⇒

 9.3. Size:152K  philips
blf872 1.pdf pdf_icon

BLF879P

BLF872 UHF power LDMOS transistor Rev. 01 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes... See More ⇒

Detailed specifications: BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 , 60N06 , BLF881 , BLF881S , BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B .

History: 2SK3977 | NTUD3169CZ | RFD8P06E | DH060N07D

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