Справочник MOSFET. BLF879P

 

BLF879P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF879P
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 42 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SOT539A

 Аналог (замена) для BLF879P

 

 

BLF879P Datasheet (PDF)

 ..1. Size:516K  nxp
blf879p blf879ps.pdf

BLF879P
BLF879P

BLF879P; BLF879PSUHF power LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performance a

 9.1. Size:134K  philips
blf871.pdf

BLF879P
BLF879P

BLF871UHF power LDMOS transistorRev. 01 18 December 2008 Objective data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 100 W broadband from HF to 1 GHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransm

 9.2. Size:587K  philips
blf871 blf871s.pdf

BLF879P
BLF879P

BLF871; BLF871SUHF power LDMOS transistorRev. 04 19 November 2009 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 9.3. Size:152K  philips
blf872 1.pdf

BLF879P
BLF879P

BLF872UHF power LDMOS transistorRev. 01 20 February 2006 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 250 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes

 9.4. Size:148K  nxp
blf878.pdf

BLF879P
BLF879P

BLF878UHF power LDMOS transistorRev. 02 15 June 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 300 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes it

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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