BLL1214-250R MOSFET. Datasheet pdf. Equivalent
Type Designator: BLL1214-250R
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT502A
BLL1214-250R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLL1214-250R Datasheet (PDF)
bll1214-250r.pdf
BLL1214-250RLDMOS L-band radar power transistorRev. 01 4 February 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.Table 1. Test informationTypical RF performance at Th =25C; tp = 1 ms
bll1214-250.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLL1214-250L-band radar LDMOS transistorProduct specification 2003 Aug 29Supersedes data of 2002 Aug 06Philips Semiconductors Product specificationL-band radar LDMOS transistor BLL1214-250FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate
bll1214-35.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLL1214-35L-band radar LDMOS drivertransistorProduct specification 2002 Sep 27Philips Semiconductors Product specificationL-band radar LDMOS driver transistor BLL1214-35FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base eliminate
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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