BLL6H1214-500 LDMOS Datasheet: N-Ch, 50V, 45A. Full specification with pinout and replacement list

BLL6H1214-500 Specs and Replacement

Type Designator: BLL6H1214-500

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 45 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.164 Ohm

Package: SOT539A

BLL6H1214-500 substitution

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BLL6H1214-500 datasheet

..1. Size:191K philips
bll6h1214-500.pdf pdf_icon

BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mod... See More ⇒

5.1. Size:281K philips
bll6h1214l-250 1214ls-250.pdf pdf_icon

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 14 July 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product... See More ⇒

9.1. Size:120K philips
bll6h0514-25.pdf pdf_icon

BLL6H0514-25 LDMOS driver transistor Rev. 04 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase =25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp VDS PL Gp RLin D Pdroop(pul... See More ⇒

9.2. Size:122K philips
bll6h0514l-130 0514ls-130.pdf pdf_icon

BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase =25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp ... See More ⇒

Detailed specifications: BLF8G10L-160, BLF8G10LS-160, BLL1214-250, BLL1214-250R, BLL1214-35, BLL6H0514-25, BLL6H0514L-130, BLL6H0514LS-130, IRF640N, BLL6H1214L-250, BLL6H1214LS-250, BLM6G10-30, BLM6G10-30G, BLM6G22-30, BLM6G22-30G, 2SK1745, 2SK60