BLL6H1214-500
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BLL6H1214-500
Тип транзистора: LDMOS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 500
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 45
A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.164
Ohm
Тип корпуса: SOT539A
Аналог (замена) для BLL6H1214-500
BLL6H1214-500
Datasheet (PDF)
..1. Size:191K philips
bll6h1214-500.pdf 
BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod
5.1. Size:281K philips
bll6h1214l-250 1214ls-250.pdf 
BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product
9.1. Size:120K philips
bll6h0514-25.pdf 
BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul
9.2. Size:122K philips
bll6h0514l-130 0514ls-130.pdf 
BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp
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