All MOSFET. BLL6H1214L-250 Datasheet

 

BLL6H1214L-250 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLL6H1214L-250
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.169 Ohm
   Package: SOT502A

 BLL6H1214L-250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLL6H1214L-250 Datasheet (PDF)

 ..1. Size:281K  philips
 bll6h1214l-250 1214ls-250.pdf

BLL6H1214L-250 BLL6H1214L-250

BLL6H1214L-250; BLL6H1214LS-250LDMOS L-band radar power transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product

 5.1. Size:191K  philips
 bll6h1214-500.pdf

BLL6H1214L-250 BLL6H1214L-250

BLL6H1214-500LDMOS L-band radar power transistorRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.Mod

 9.1. Size:120K  philips
 bll6h0514-25.pdf

BLL6H1214L-250 BLL6H1214L-250

BLL6H0514-25LDMOS driver transistorRev. 04 30 March 2010 Product data sheet1. Product profile1.1 General description25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp VDS PL Gp RLin D Pdroop(pul

 9.2. Size:122K  philips
 bll6h0514l-130 0514ls-130.pdf

BLL6H1214L-250 BLL6H1214L-250

BLL6H0514L-130; BLL6H0514LS-130LDMOS driver transistorRev. 2 13 September 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.Table 1. Application informationTypical RF performance at Tcase =25C; IDq = 50 mA; in a class-AB application circuit.Mode of operation f tp

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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