BLL6H1214L-250 - описание и поиск аналогов

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 14 July 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB product

BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mod

BLL6H0514-25 LDMOS driver transistor Rev. 04 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase =25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp VDS PL Gp RLin D Pdroop(pul

BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase =25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp