All MOSFET. BLS6G2731-6G Datasheet

 

BLS6G2731-6G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLS6G2731-6G
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.26 Ohm
   Package: SOT975C

 BLS6G2731-6G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLS6G2731-6G Datasheet (PDF)

 ..1. Size:70K  philips
 bls6g2731-6g.pdf

BLS6G2731-6G BLS6G2731-6G

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

 4.1. Size:74K  nxp
 bls6g2731-120 6g2731s-120.pdf

BLS6G2731-6G BLS6G2731-6G

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

 5.1. Size:134K  nxp
 bls6g2731s-130.pdf

BLS6G2731-6G BLS6G2731-6G

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

 6.1. Size:681K  nxp
 bls6g2735l-30 bls6g2735ls-30.pdf

BLS6G2731-6G BLS6G2731-6G

BLS6G2735L-30; BLS6G2735LS-30S-band LDMOS transistorRev. 3 24 September 2012 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.Table 1. Application informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 50 mA.Test signal f VDS PL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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