BLS6G2731-6G - параметры транзистора MOSFET, его аналоги, datasheet

BLS6G2731-6G Datasheet (PDF)

..1. Size:70K philips
bls6g2731-6g.pdf pdf_icon

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

4.1. Size:74K nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

5.1. Size:134K nxp
bls6g2731s-130.pdf pdf_icon

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

6.1. Size:681K nxp
bls6g2735l-30 bls6g2735ls-30.pdf pdf_icon

BLS6G2735L-30; BLS6G2735LS-30S-band LDMOS transistorRev. 3 24 September 2012 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.Table 1. Application informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 50 mA.Test signal f VDS PL

Другие MOSFET... BLM6G10-30G , BLM6G22-30 , BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , AON7408 , 2SJ559 , BLS6G2731S-120 , BLS6G2731S-130 , BLS6G2735L-30 , BLS6G2735LS-30 , BLS6G2933P-200 , BLS6G2933S-130 , BLS6G3135-120 .