All MOSFET. BLS6G2933S-130 Datasheet

 

BLS6G2933S-130 Datasheet and Replacement


   Type Designator: BLS6G2933S-130
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT922-1
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BLS6G2933S-130 Datasheet (PDF)

 ..1. Size:135K  philips
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BLS6G2933S-130

BLS6G2933S-130LDMOS S-band radar power transistorRev. 03 3 March 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mode o

 5.1. Size:100K  nxp
bls6g2933p-200.pdf pdf_icon

BLS6G2933S-130

BLS6G2933P-200LDMOS S-Band radar pallet amplifierRev. 01 28 May 2010 Objective data sheet1. Product profile1.1 General description200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(1dB) Gp D IDq(GHz)

 8.1. Size:70K  philips
bls6g2731-6g.pdf pdf_icon

BLS6G2933S-130

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

 8.2. Size:74K  nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2933S-130

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

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History: WMM11N80M3 | FDMS9620S

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