BLS6G2933S-130 PDF and Equivalents Search

 

BLS6G2933S-130 Specs and Replacement

Type Designator: BLS6G2933S-130

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V

|Id| ⓘ - Maximum Drain Current: 33 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT922-1

BLS6G2933S-130 substitution

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BLS6G2933S-130 datasheet

 ..1. Size:135K  philips
bls6g2933s-130.pdf pdf_icon

BLS6G2933S-130

BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode o... See More ⇒

 5.1. Size:100K  nxp
bls6g2933p-200.pdf pdf_icon

BLS6G2933S-130

BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB test circuit. Mode of operation f VDS PL(1dB) Gp D IDq (GHz) ... See More ⇒

 8.1. Size:70K  philips
bls6g2731-6g.pdf pdf_icon

BLS6G2933S-130

BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of ... See More ⇒

 8.2. Size:74K  nxp
bls6g2731-120 6g2731s-120.pdf pdf_icon

BLS6G2933S-130

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production te... See More ⇒

Detailed specifications: BLS6G2731-120, BLS6G2731-6G, 2SJ559, BLS6G2731S-120, BLS6G2731S-130, BLS6G2735L-30, BLS6G2735LS-30, BLS6G2933P-200, IRF9540N, BLS6G3135-120, BLS6G3135-20, BLS6G3135S-120, BLS6G3135S-20, BLS7G2325L-105, BLS7G2729L-350P, BLS7G2729LS-350P, BLS7G2933S-150

Keywords - BLS6G2933S-130 MOSFET specs

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