Справочник MOSFET. BLS6G2933S-130

 

BLS6G2933S-130 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLS6G2933S-130
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 32 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: SOT922-1
     - подбор MOSFET транзистора по параметрам

 

BLS6G2933S-130 Datasheet (PDF)

 ..1. Size:135K  philips
bls6g2933s-130.pdfpdf_icon

BLS6G2933S-130

BLS6G2933S-130LDMOS S-band radar power transistorRev. 03 3 March 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mode o

 5.1. Size:100K  nxp
bls6g2933p-200.pdfpdf_icon

BLS6G2933S-130

BLS6G2933P-200LDMOS S-Band radar pallet amplifierRev. 01 28 May 2010 Objective data sheet1. Product profile1.1 General description200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(1dB) Gp D IDq(GHz)

 8.1. Size:70K  philips
bls6g2731-6g.pdfpdf_icon

BLS6G2933S-130

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

 8.2. Size:74K  nxp
bls6g2731-120 6g2731s-120.pdfpdf_icon

BLS6G2933S-130

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AFN2308A | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | OSG60R190DTF | RU7550S | AUIRFZ34N

 

 
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