All MOSFET. BSH111 Datasheet

 

BSH111 Datasheet and Replacement


   Type Designator: BSH111
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.335 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO236AB
 

 BSH111 substitution

   - MOSFET ⓘ Cross-Reference Search

 

BSH111 Datasheet (PDF)

 ..1. Size:281K  philips
bsh111.pdf pdf_icon

BSH111

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A

 0.1. Size:296K  philips
bsh111-01.pdf pdf_icon

BSH111

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3

 0.2. Size:281K  nxp
bsh111bk.pdf pdf_icon

BSH111

BSH111BK55 V, N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disc

 9.1. Size:290K  philips
bsh112.pdf pdf_icon

BSH111

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

Datasheet: BLS7G2729LS-350P , BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , AON7506 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 .

History: PE532DY | OSG60R1K8PF

Keywords - BSH111 MOSFET datasheet

 BSH111 cross reference
 BSH111 equivalent finder
 BSH111 lookup
 BSH111 substitution
 BSH111 replacement

 

 
Back to Top

 


 
.