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BSP030 Specs and Replacement

Type Designator: BSP030

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SC73

BSP030 substitution

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BSP030 datasheet

 ..1. Size:351K  philips
 bsp030.pdf pdf_icon

BSP030

BSP030 N-channel enhancement mode field-effect transistor Rev. 04 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSP030 in SOT223. 2. Features TrenchMOS technology Fast switching Low on-state resistance Logic level compatible Surface mount pac... See More ⇒

 ..2. Size:884K  cn vbsemi
 bsp030.pdf pdf_icon

BSP030

BSP030 www.VBsemi.tw www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise... See More ⇒

Detailed specifications: BSH111, BSH114, BSH121, BSH201, BSH202, BSH203, BSH205, BSH207, TK10A60D, BSP100, BSP110, BSP122, BSP126, BSP130, BSP220, BSP225, BSP230

Keywords - BSP030 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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