All MOSFET. BSP030 Datasheet

 

BSP030 Datasheet and Replacement


   Type Designator: BSP030
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SC73
 

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BSP030 Datasheet (PDF)

 ..1. Size:351K  philips
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BSP030

BSP030N-channel enhancement mode field-effect transistorRev. 04 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSP030 in SOT223.2. Features TrenchMOS technology Fast switching Low on-state resistance Logic level compatible Surface mount pac

 ..2. Size:884K  cn vbsemi
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BSP030

BSP030www.VBsemi.twwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

Datasheet: BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , IRFZ24N , BSP100 , BSP110 , BSP122 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 .

History: AOSP62530 | PSMN2R0-40YLD | 30N06L-TA3-T | STD5N95K5 | 2SK1152L | PHD16N03T | 2SJ605

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