BSS138P MOSFET Datasheet: N-Ch, 60V, 0.36A. Full specification with pinout and replacement list

BSS138P Specs and Replacement

Type Designator: BSS138P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO236AB

BSS138P substitution

- MOSFET ⓘ Cross-Reference Search

BSS138P datasheet

..1. Size:172K nxp
bss138p.pdf pdf_icon

BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te... See More ⇒

0.1. Size:915K nxp
bss138ps.pdf pdf_icon

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Tr... See More ⇒

0.2. Size:899K nxp
bss138pw.pdf pdf_icon

BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFE... See More ⇒

0.3. Size:1855K cn tech public
bss138ps.pdf pdf_icon